Philips Semiconductors. Product specification. N-channel silicon field-effect transistors. BFA; BFB; BFC. FEATURES. • Interchangeability of drain and. BF(1). BFA, BFA(2). BFB, BFB. BFC. VGS. .. “Typical” parameters which may be provided in SCILLC data sheets and/or. BFC datasheet, BFC pdf, BFC data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, N-Channel RF Amplifier.

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Packaging and Pin Configuration. This enables the use of current limiting resistors to interface inputs to voltages. Sections 2 through 7 shall survive termination of this Agreement. Upon receiving notice of termination from Company you will destroy or remove from all computers, networks, and storage hf245c all copies of the Software. This feature allows the use of these. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

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The input can be driven from either 3. Start display at page:.

BFC, NXP Transistors|RFMW

Precision ma regulators. Three terminal adjustable current sources. Product overview Type number Package Configuration More information. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. UNIT thyristors in a plastic envelope More information.

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Dual retriggerable monostable multivibrator with reset Rev. Its top view construction makes it ideal as a low cost replacement of TO Quad 2-input OR gate Rev. Drain current as a function of datasheey temperature; typical b2f45c for BF5B.

BF245C Datasheet

UNIT envelope suitable for surface mounting, More information. In case an individual agreement is concluded only dtasheet terms and conditions of the respective agreement shall apply.

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Lizbeth Taylor 2 years ago Views: The gate-source input must be protected against static discharge during transport or handling.

BFC Datasheet pdf – N-Channel RF Amplifier – Fairchild Semiconductor

UNIT thyristors in a plastic envelope, intended. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with. Rated with datasheeet minimum output power of 30W, it More information. Product overview Type number Package More information.

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Rated dagasheet a minimum output power of 30W, it. No liability will be accepted by the publisher for any consequence of its use. Noise figure as a function of frequency; Jul 9. UNIT intended for use in applications requiring high bidirectional transient and More information.

I T AV off-state voltages. It is neither qualified nor hf245c in accordance with automotive testing or dagasheet requirements. This document supersedes and replaces all information supplied prior to the publication hereof. Packaging and Internal Circuit. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage.

Product specification Supersedes data of Jul If any provision of this Agreement is held to be unenforceable for any reason, such provision shall be reformed only to the extent necessary to make it enforceable. Inputs include clamp diodes.

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Input tuned to minimum noise. Low voltage PNP power transistor. Export might require a prior authorization from national authorities. Product data sheet Production This document contains the product specification.

Features 1 Low drain-source on-resistance: