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In a finalized package form, Vd1 and Vd2 terminals are commonly connected to the Vdd terminal. Amc operating temperature will directly affect the device MTTF.
6480 subject to change. Typical ESD diode current versus diode voltage for connected diodes in series Figure Wide Frequency Range GHz? This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies 9. Operation in excess of any one of these conditions may result in permanent damage to this device.
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For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. The drift error will be less than 0. Negative supply is used for the DC gate biasing. Frequency range 6 to 18 GHz? Typical S11 over temperature Figure Typical Gain and Reverse Isolation Figure 2. Typical ESD diode current versus diode voltage for connected diodes in series is shown in Figure A typical measured detector voltage versus output power at 18GHz is shown Figure Vofs can be measured at a single reference temperature.
Vofs can be measured before each detector measurement by removing or switching off the power source and measuring Vref – Vdet. Input port partially matched For narrowband applications, customer may obtain optimum matching and 608 with an additional matching circuit? Typical S22 over temperature Figure This data represents package part performances, and does not contain test fixture losses. Observe Precautions for handling electrostatic sensitive devices.
Vofs can either be characterized over temperature and stored in a lookup table, or it can be measured at two temperatures and a linear fit used to calculate Vofs at any temperature. An optional output power detector network is also provided.
Minor improvements in performance are possible depending on the application. A single DC gate supply connected to Vg will bias all gain stages. Electro Discharge Damage and Control.
AMMC-6408 6-18 GHz 1W Power Amplifier
Typical IM3 level and Ids vs. The bonding diagram for the recommended assembly is shown in Figure Typical IM3 level vs. Muting can be accomplished by setting Vgg to the pinch-off voltage Vp. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD. This method gives an error close to the method 1.
Integrated RF power detector? No ground wires are needed since ground connections are made with plated through-holes to the backside of the device.
These ratings apply to each individual FET 5. Small signal Gain of 18dB? There are three methods to calculate Vofs: Broadband Wireless Access including This method gives an error due to temperature drift of less than 0.
The drain bias voltage range is 3 to 5V.